PAM-XIAMEN can offer 6H SiC wafer with n type or semi-insulating. Silicon carbide wafer is a material presenting different crystalline structures called polytypes, which has more than 250 structures. Different polytypes has different atomic stacking sequences. Polytypes generate the cubic, hexagonal or rhombohedral structures, which include [...]
2020-03-25meta-author
AlGaInP LED Chip Sepcification
· Orange LED Wafer Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip Sepcification (Base on 7mil*7mil chips)
Parameter
Chip Size
7mil(±1mil)*7mil(±1mil)
Thickness
7mil(±1mil)
P Electrode
U/L
N Electrode
AU
Structure
Such as right-shown
·Optical-elctric characters
Parameter
Condition
Min.
Typ
Max.
Unit
Forward voltage
If=10μA
1.35
┄
┄
V
Reverse voltage
If=20mA
┄
┄
2.2
V
Reverse current
V=10V
┄
┄
2
μm
Wavelength
If=20mA
565
┄
575
nm
Half wave width
If=20mA
┄
10
┄
nm
·Light intensity characters
Brightness code
LA
LB
LC
LD
LE
LF
LG
LH
IV(mcd)
10-15
15-20
20-25
25-30
30-35
35-40
40-50
50-60
Source:PAM-XIAMEN
If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]
The minority carrier lifetime, also known as the average lifetime of non-equilibrium minority carriers, reflects the decay rate of minority carriers in semiconductor materials. It can directly reflect the quality of semiconductor materials and the performance of high-voltage high-power devices. Take the SiC bipolar power [...]
2024-03-27meta-author
PAM-XIAMEN, one of leading nanofabrication companies, has formed a compatible management system of multi-material, multi-user, multi-device, multi-process after years of exploration. The details as follows:
* Multi-Material
We can process multiple materials: Si, III-V semiconductor, glass, ceramic;
– Can process wafers of 6 inches and below, compatible [...]
2021-11-30meta-author
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates
The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5度),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp [...]
2019-07-03meta-author