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Home > News > PAM-XIAMEN Offers AlGaN material

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of AlGaN and other related products and services announced the new availability of size 2”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line.

 

Dr. Shaka, said, "We are pleased to offer AlGaN material to our customers including many who are developing better and more reliable for light-emitting diodes operating in blue to ultraviolet region. Our AlGaN material has excellent properties, the bandgap of AlxGa1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1). It is also used in blue semiconductor lasers and in detectors of ultraviolet radiation, and in AlGaN/GaN High-electron-mobility transistors. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our AlGaN material are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products."

 

PAM-XIAMEN's improved AlGaN product line has benefited from strong tech,support from Native University and Laboratory Center.

 

Now it shows an example as follows:

 

0) Substrate: H-R Si (111)

1) Buffer: AlGaN – 1,5 µm 

2) Channel: GaN – 150 nm

3) Barrier: AlN – 6 nm 

4) In-situ SiN -3 nm

5) PECVD SiN – 50 nm

 

About Xiamen Powerway Advanced Material Co., Ltd

 

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

 

About AlGaN

 

Aluminium gallium nitride(AlGaN) is  a semiconductor material. It is any alloy of aluminium nitride and gallium nitride.

 

The bandgap of AlxGa1−xN can be tailored from 3.4eV (xAl=0) to 6.2eV (xAl=1).[1]

 

AlGaN is used to manufacture light-emitting diodes operating in blue to ultraviolet region, where wavelengths down to 250 nm (far UV) were achieved. It is also used in blue semiconductor lasers.

 

It is also used in detectors of ultraviolet radiation, and in AlGaN/GaN High-electron-mobility transistors.

 

AlGaN is often used together with gallium nitride or aluminium nitride, forming heterojunctions.

 

AlGaN layers can be also grown on sapphire.

 

There are many areas of potential utilization of the alloy AlxGa1-xN, not the least of which are ultraviolet detector applications. These include flame and heat sensors,missile plume detection, and secure-from-earth inter-satellite communications. The AlxGa1-xN bandgap can be tailored from 4.3eV (xAl=0) to 6.2eV (xAl=1), corresponding to a band-edge wavelength range of 365nm to 200nm, to suit each unique application. Solar radiation below approximately 300nm wavelength is absorbed by ozone in the atmosphere. Thus, for applications in the presence of a large solar radiation background, a solar-blind detector that exhibits no spectral response for wavelengths at or above 300nm is extremely desirable. For solar-blind detectors a composition of greater than 30% Al is needed.

 

Q&A

C: Could you propose epi-wafers like below

   0) Substrate: H-R Si (111)

1) Buffer: AlGaN – 1,5 µm 

2) Channel: GaN – 150 nm

3) Barrier: AlN – 6 nm 

4) In-situ SiN -3 nm

5) PECVD SiN – 50 nm

P: Yes

1) Buffer: AlGaN – 1,5 µm -- what is Al%? C: 8%

     3) Barrier: AlN – 6 nm -- if there is any requirement of electrical properties?
       C:

      electrical properties:

       Mobility - 1200-1400 cm^2*V^-1*s^-1;
       Concentration - (2-2.2)*10^13 cm-1;
       Layer resistance- 235-240 Ohm/sqw

P: Should we meet concentration in the range of 2E13-2.2E13? Or you can accept lower concentration? please confirm

C: Yes, we want this range of concentration (Room-temperature Hall measurements).What concentration could you propose?

P: you said“Layer resistance- 235-240 Ohm/sqw.”, does it means sheet resistivity of the whole wafer?

C: Yes, It means sheet resistivity in the whole DHFET structure*.

P: The concentration can not reach (2-2.2)E13, what we can do is 1E13.Also for the sheet resistivity, we can reach <240 normally, however after deposit SiN, we can not guarantee <240.

 

Key Words: AlGaN, Aluminium Gallium Nitride

 

For more information, please visit our website: http://www.powerwaywafer.com, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.