VCSEL Market Overview
At present, the world’s major designers include Finsar, Lumentum, Princeton Optronics, Heptagon, IIVI and other companies, which are at the forefront of R&D roles on the mobile VCSEL. III-V EPI epitaxial wafers are supplied by companies such as IQE, PAM-XIAMEN, VPEC and Landmark [...]
2018-09-27meta-author
PAM-XIAMEN offers 4H semi-insulating SiC wafer with vanadium doped or undoped high-purity, semi-insulating, size from 2” to 6”. The transmission rate of 4H semi-insulating silicon carbide with thickness of 353 um, double sides polished is shown as the figure:
Transmission Rate of 4H Semi-insulating SiC Wafer
We also [...]
2018-08-07meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
2 inch in diameter wafers
Monocrystalline silicon with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 microns,
Warping <35 microns
For more information, please visit our website: [...]
2019-07-01meta-author
Analyses of Five Major LED Manufacturers Vertical Integration Strategies (Part 1)
Upheld as the classical business models in the LED industry, Dutch lighting giant Philips and leading German lighting manufacturer Osram business models have been the most discussed among market insiders. The two European companies vertical integration [...]
2016-05-04meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author
From a solid-state device perspective, aluminum arsenide (AlAs) has great potential, especially because alloys of AlAs and GaAs can provide material for high-speed electronic and optoelectronic devices. Moreover, GaAs / AlAs quantum well structures are widely used in the fabrication of III-V epitaxial wafer. [...]