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Home > News > PAM-XIAMEN Offers GaAs Epi with AlAs layer on GaAs substrate

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs Epi wafer and other related products and services announced the new availability of size 2"-4” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line. Dr. Shaka, said, "We are pleased to offer GaAs Epi wafer to our customers including many who are developing better and more reliable for Vertical-cavity surface-emitting laser. Our GaAs Epi wafer has excellent properties. VCSELs for wavelengths from 650 nm to 1300 nm are typically based on gallium arsenide (GaAs) wafers with DBRs formed from GaAs and aluminium gallium arsenide (AlxGa(1-x)As). The GaAs–AlGaAs system is favored for constructing VCSELs because the lattice constant of the material does not vary strongly as the composition is changed, permitting multiple "lattice-matched" epitaxial layers to be grown on a GaAs substrate. However, the refractive index of AlGaAs does vary relatively strongly as the Al fraction is increased, minimizing the number of layers required to form an efficient Bragg mirror compared to other candidate material systems. Furthermore, at high aluminium concentrations, an oxide can be formed from AlGaAs, and this oxide can be used to restrict the current in a VCSEL, enabling very low threshold currents. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our GaAs Epi wafer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products."

 

PAM-XIAMEN's improved GaAs Epi product line has benefited from strong technology, which is supported from Native University and Laboratory Center.

Now it shows an example as follows:

1.2-inch n+ GaAs Epi with AlAs layer on n+ GaAs substrate, specification as below:

Top Layer: 2 um n+ semi-conducting GaAs epi layer,

Si-doping with >E18 doping concentration

Second Layer: 10 nm AlAs undoped (the AlAs layer must be grown

using As2 [dimer] and NOT As4 [tetramer]),

Third Layer: 300 nm n+ semi-conducting GaAs buffer layer,

Si-doping with >E18 doping concentration

Bottom Layer: 350 um n+ semi-conducting GaAs substrate, Si-doping with >E18 doping

2.2-inch p+ GaAs Epi with AlAs layer on p+ GaAs substrate, specification as below:

The required structure is listed from top to bottom:

Top Layer: 2 um p+ semi-conducting GaAs epi layer,

>E18 doping concentration, any dopant type

Second Layer: 10 nm AlAs undoped (the AlAs layer must be grown

using As2 [dimer] and NOT As4 [tetramer]),

Third Layer: 300 nm p+ semi-conducting GaAs buffer layer,

>E18 doping concentration, any dopant type

Bottom Layer: 350 um p+ semi-conducting GaAs substrate, >E18 doping, any dopant type

 

About Xiamen Powerway Advanced Material Co., Ltd

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer. We are manufacturing various types of epi wafer III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD. We supply custom structures to meet customer specifications. Please contact us for more product information or discuss a specific epi layer structure.

 

About GaAs Epi wafer GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including indium gallium arsenide, aluminum gallium arsenide and others. Epitaxy refers to the deposition of a crystalline overlayer on a crystalline substrate. The overlayer is called an epitaxial film or epitaxial layer. The term epitaxy comes from the Greek roots epi (ἐπί), meaning "above", and taxis (τάξις), meaning "an ordered manner". It can be translated as "arranging upon". For most technological applications, it is desired that the deposited material form a crystalline overlayer that has one well-defined orientation with respect to the substrate crystal structure (single-domain epitaxy). Epitaxial films may be grown from gaseous or liquid precursors. Because the substrate acts as a seed crystal, the deposited film may lock into one or more crystallographic orientations with respect to the substrate crystal. If the overlayer either forms a random orientation with respect to the substrate or does not form an ordered overlayer, it is termed non-epitaxial growth. If an epitaxial film is deposited on a substrate of the same composition, the process is called homoepitaxy; otherwise it is called heteroepitaxy.

 

For more information, please visit our website: http://www.powerwaywafer.com,

send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.