Bookmark and Share
Home > News > Epitaxial Wafers
Products
 
Thanks to MOCVD and MBE technology,PAM-XIAMEN, a epitaxial wafer supplier, offers epitaxial wafer products, including GaN epitaxial wafer, GaAs epitaxial wafer, SiC epitaxial wafer, InP epitaxial wafer, and now we give a brief introduction as follows:


1)GaN epitaxial growth on sapphire template;
   Conduction Type: Si doped (N+) 
   Thickness:4um,20um,30um,50um,100um
   Orientation: c-axis (0001) ± 1.0° 
   Resistivity: <0.05 Ohm.cm
   Dislocation Density:<1x108cm-2
   Substrate Structure: GaN on Sapphire(0001)
   Front Surface Finish (Ga-face): As-grown 
   Back Surface Finish: SSP or DSP
   Usable Area:  90 % 
   Available Sizes: 2” (50.8 mm), 3” (76.2 mm) and 4” (100 mm) 
   Available Grades: Production, Research and Rider 
 
2)AlN epitaxial growth on sapphire template;
   Conduction Type: semi-insulating
   Thickness:50-1000nm+/- 10%
   Orientation: C-axis(0001)+/-1O 
   Orientation Flat:A-plane
   XRD FWHM of (0002):<200 arcsec
   Substrate Structure: AlN on sapphire 
   Back Surface Finish: SSP or DSP,epi-ready
   Usable Area:  90 % 
   Available Sizes: 2” (50.8 mm), 
   Available Grades: Production, Research and Rider 
 
3AlGaN epitaxial growth on sapphire, including HEMT structure;
   Conduction Type: semi-insulating
   Thickness:50-1000nm+/- 10%
   Orientation: C-axis(0001)+/-1O 
   Orientation Flat:A-plane
   XRD FWHM of (0002):<200 arcsec
   Substrate Structure: AlGaN on sapphire 
   Back Surface Finish: SSP or DSP,epi-ready
   Usable Area:  90 % 
   Available Sizes: 2” (50.8 mm), 
   Available Grades: Production, Research and Rider 
 
4LT-GaAs epi layer on GaAs substrate
Diamater(mm):Ф 50.8mm ± 1mm
Thickness:1-2um or 2-3um
Marco Defect Density: 5 cm-2
Resistivity(300K):>108 Ohm-cm
Carrier:0.5ps
Dislocation Density:<1x106cm-2
Useable Surface Area:80%
Polishing:Single side polished
Substrate:GaAs substrate
 
5GaAs Schottky Diode Epitaxial Wafers
Epitaxial Structure
No.
Material
Composition
Thickness Target(um)
Thickness Tol.
C/C(cm3) Target
C/C     Tol.
Dopant
Carrrier Type
4
GaAs
 
1
±10%
5.0E18
N/A
Si
N++
3
GaAs
 
0.28
±10%
2.00E+17
±10%
Si
N
2
Ga1-xAlxAs
x=0.50
1
±10%
--
N/A
--
--
1
GaAs
 
0.05
±10%
--
N/A
--
--
Substrate: 2'',3'',4"

6GaAs HEMT epi wafer
 1) 4" SI substrate GaAs with [100] orientation,
 2) [buffer] superlattice of Al(0.3)Ga(0.7)As/GaAs with thicknesses
 10/3 nm, repeat 170 times,
 3) barrier Al(0.3)Ga(0.7)As 400 nm,
 4) quantum well GaAs 20 nm,
 5) spacer Al(0.3)Ga(0.7)As 15 nm,
 6) delta-doping with Si to create electron density 5-6*10^11 cm^(-2),
 7) barrier Al(0.3)Ga(0.7)As 180 nm,
 8) cap layer GaAs 15nm.
 
7InP epitaxial wafer:
InP Substrate:
P/E 2"dia×350+/-25um,
n-type InP:S
(100)+/-0.5°,
EDP<1E4/cm2.
One-side-polished, back-side matte etched, SEMI Flats.
 
EPI layer :
 
Epi 1: InGaAs:(100)
       Thickness:100nm,
       etching stop layer
 
Epi 2: InP:(100)
       Thickness:50nm,
        bonding layer
 
8Blue LED wafer
p-GaN/p-AlGaN/InGaN/GaN/n-GaN/u-GaN
p-GaN 0.2um
p-AlGaN 0.03um
InGaN/GaN(active area) 0.2um
n-GaN 2.5um
Etch stop   1.0um
u- GaN (buffer) 3.5um
Al2O3 (Substrate) 430um
 
9Green LED wafer
1.Sapphire substrate:430um
2.Buffer layer:20nm
3.Undoped GaN:2.5um
4.Si doped GaN 3um
5.Quantum well light emtting area:200nm
6.Electron barrier layer 20nm
7.Mg DOPED GaN 200nm
8.Surface contact 10nm
 
Source: PAM-XIAMEN
 
Related Products:
InGaN epitxial growth on sapphire.
AlGaP/GaAs Epi Wafer for Solar Cell
GaAs Based Epitaxial Wafer for LED and LD
GaAs pHEMT epi wafer
GaAs mHEMT epi wafer 
GaAs HBT epi wafer
InGaAs/InP epi wafer for PIN
InP/InGaAs/InP epi wafer
SiC epitaxial wafer:

 

If you need more information about PAM-XIAMEN offer epitaxial wafer for LED,LD and micro-electronic application, please visit our website:http://www.powerwaywafer.com, send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.