PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
P
Boron
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
P
Boron
FZ
-100
>3000
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
P
Boron
CZ
-100
1-20
350-400
P/E/WTOx
76.2
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
76.2
P
Boron
CZ
-100
1-10
825-875
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
850-1000
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
76.2
P
Boron
CZ
-111
1-20
300-350
P/P
PRIME
76.2
P
Boron
CZ
-111
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
>100
275-325
P/P
PRIME
76.2
P
Boron
CZ
-110
1-20
350-400
P/E
PRIME
76.2
P
Boron
CZ
-110
100-200
800-850
P/P
PRIME
76.2
Any
Any
CZ
Any
Any
250-500
P/E
TEST
76.2
Any
Any
CZ
-100
1-100
330-430
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-100
> 15000
350-400
P/E
PRIME
76.2
Intrinsic
Undoped
FZ
-111
> 15000
350-400
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and [...]
2019-03-04meta-author
PAM XIAMEN offers Quartz Frit.
1” Diameter Porous Quartz Frits with Optional Porosity, 1 pc
Specifications
Diameter – mm
25
Thickness – mm
4
Porosity
15~40um or 4~15um (Please select the pore size in the optional bar)
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com [...]
2019-04-18meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (111)
BaTiO3 (111) 5×5 x1.0 mm, 2SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x0.5 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 5×5 x1.0 mm, 1SP , Substrate grade(with domains)
BaTiO3 (111) 10x10x0.5 mm, 1SP , [...]
2019-04-17meta-author
PAM XIAMEN offers 2″ Diameter Wafer-2″ wafers(110).
2″ Diameter Wafer
2″ wafers(110)
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.1-0.5 ohm.cm
Ge Wafer (110)N type, Sb doped, 2″ dia x 0.5 mm, 1SP Resistivity: 0.82-0.98ohm.cm
Ge Wafer (110)N [...]
2019-04-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
4″
630
P/G
FZ >7,000
SEMI Prime, Lifetime>1,000μs, Back-side Fine Ground
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs,settes of 6 and 8 wafers
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI, Lifetime>1,600μs
n-type Si:P
[111] ±0.5°
4″
675
P/E
FZ >7,000
SEMI TEST (Scratches, Lifetime>1,600μs
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 7,000-10,000
SEMI Prime, Lifetime>1,000μs, Light scratches
n-type Si:P
[111] ±0.5°
4″
525
P/E
FZ >5,000
SEMI Prime, Lifetime>1,000μs
n-type Si:P
[111-1° towards[110]] ±0.5°
4″
525
P/E
FZ >5,000
SEMI TEST (scratches on back-side)
n-type Si:P
[111] ±0.25°
4″
675
P/E
FZ 5,000-7,000
SEMI Prime, [...]
2019-03-05meta-author
IR Transmittance Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author