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Gallium Semiconductor Wafer

GaAs Wafer Substrate - Gallium Arsenide  
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type   Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
 
a/cm3
cm2/Vs
/cm2
1-100
GaAs
(100)
25.4
4000±50
DSP
>1E7
Undoped
N/A
N/A
<1E5
1-100
GaAs
(100)
50.7
350-370
SSP
>1E7
Undoped
N/A
>3500
<10000
1-100
GaAs
(100)2°±0.50 off toward (011)
50.7
350±10
SSP
(0.8-9)E-3
N/Si
(8)E17
2000-3000
<5000
1-100
GaAs
(100)6°±0.50 off toward (011)
50.7
350±20
SSP
(0.8-9)×10-3
N/Si
(0.2-4)E18
≥1000
5000
1-100
GaAs
(100)
50.8
350
SSP
N/A
P/Zn
(1-5)E19
N/A
<5000
1-100
GaAs
(100)
50.8
5000±50
SSP
>1E8
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)
50.8
4000±50
SSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)
50.8
8000±10
As cut
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)
50.8
8000±10
DSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)
50.8
3000
SSP
>1E7
N/Si
N/A
N/A
N/A
1-100
GaAs
(100)
50.8
350±25
SSP
>1E7
N/A
(1-5)E19 
N/A
N/A
1-100
GaAs
(100)
50.8
350±25
SSP
N/A
N/A
(0.4-3.5)E18
1400
100
1-100
GaAs
(100)0°or 2°
76.2
130±20
DSP
N/A
Undoped
N/A
N/A
<10000
1-100
GaAs
(100)2°±0.50
76.2
350±25
SSP
N/A
N/Si
(0.4-2.5)E18
N/A
5000
1-100
GaAs
(100)
76.2
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaAs
(100)
76.2
350±25
SSP
>1E7
Undoped
N/A
N/A
8E4 or 1E4
1-100
GaAs
(100)
76.2
625±25
DSP
>1E7
Undoped
N/A
4500
8E4 or 1E4
1-100
GaAs
(100)2°±0.10 off toward(110)
76.2
500
SSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)
100
625
DSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)
100
625±25
DSP
N/A
N/A
N/A
N/A
N/A
1-100
GaAs
(100)2°±0.50 off toward (011)
100
350±25
SSP
N/A
N/Si
(0.4-3.5)E18
N/A
5000
1-100
GaAs
(100)2°±0.10 off toward (110)
100
625±25
DSP
(1-4)E18
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)2°±0.50 off toward (011)
100
625±25
DSP
(1.0-4.0)1E8
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)2°±0.50 off toward (011)
100
625±25
DSP
(1-4)E8
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)2°±0.50 off toward (011)
100
350±25
SSP
N/A
N/Si
(0.4-4)E18
N/A
5000
1-100
GaAs
(100)15°±0.50 off toward (011)
100
350±25
SSP
N/A
N/Si
(0.4-4)E18
N/A
5000
1-100
GaAs
(100)2°±0.50
100
350±25
DSP
N/A
N/Si
(0.4-4)E18
N/A
5000
1-100
GaAs
(100)2°±0.50
100
625±25
SSP
(1-4)E18
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)2°±0.50
150
675±25
DSP
>1E7
Undoped
N/A
N/A
N/A
1-100
GaAs
(100)0°±3.0°
150
675±25
DSP
>1.0×107
Undoped
N/A
N/A
N/A
1-100
GaAs
(310)
50.8/76.2
N/A
N/A
N/A
N/A
N/A
N/A
N/A

 

As a GaAs wafer supplier,we offer GaAs semiconductor list for your reference, if you need price detail, please contact our sales team                                                                                                                                                                                

 

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.*** We offer GaAs epitaxy service by MBE and MOCVD, please contact with our sales team.

 

 

 

GaSb Wafer Substrate - Gallium Antimonide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type   Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
 
a/cm3
cm2/Vs
/cm2
1-100
GaSb
(100)±0.5
50.8
500±25
SSP
N/A
Te
1E17 - 5E18
N/A
< 1000 
1-100
GaSb
(111)A±0.5
50.8
500±25
SSP
N/A
Te
1E17 - 5E18
N/A
< 1000
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Te
(5-8)E17
N/A
N/A
1-100
GaSb
(111)B
50.8
N/A
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
P/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/
(1-5)E17cm-3
N/A
N/A
1-100
GaSb
(100)±0.5
50.8
500
SSP
N/A
N/Te
(1-8)E17/(2-7)E16
N/A
< 1000
1-100
GaSb
(100)
50.8
450±25
SSP
N/A
N/A
(1-1.2)E17
N/A
N/A
1-100
GaSb
(100)
50.8
350±25
SSP
N/A
N/A
N/A
N/A
N/A
1-100
GaSb
(100)
76.8
500-600
N/A
N/A
Undoped
none
N/A
N/A
1-100
GaSb
(100)
100
800±25
DSP
N/A
P/Zn
N/A
N/A
N/A
1-100
GaSb
(100)
100
250±25
N/A
N/A
 P/ZnO
N/A
N/A
N/A

 

As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team

 

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

 

 

 

GaP Wafer Substrate- Gallium Posphide
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type   Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
 
a/cm3
cm2/Vs
/cm2
1-100
GaP
(111)
50
5000 ± 20
SSP
N/A
N
N/A
N/A
N/A
1-100
GaP
(111)±0.5°
50±0.5
300 ± 20
N/A
N/A
S
(27)×1E17
100
<3×1E5
1-100
GaP
(111)±0.5°
50±0.5
300 ± 20
N/A
N/A
Te
(12)×1E17
100
<3×1E5

 

As a GaP wafer supplier,we offer GaP semiconductor list for your reference, if you need price detail, please contact our sales team

 

Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.