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 InGaAs photodetectors

 

Material

X

Thickness (nm)

Dopant

Doping concentration

InP

 

1000

N (Sulfur)

3e16

In(x)GaAs

0.53

3000

U/D

5e14

InP

 

500

N (Sulfur)

3e16

Substrate

 

 

SI (Fe)