Bookmark and Share
Home > Download > InGaAsN epitaxially on GaAs or InP wafers

 

InGaAsN epitaxially on GaAs or InP wafers

 

 

 

 

 

 

 

 

 

 

PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:

 

 

 

 

 

 

 

 

Layer

Doping

Thickness (um)                      

 Remark

GaAs 

 undoped

~500  

<001> wafer substrate

 

InGaAsN*

  undoped 

0.150                              

band gap <1 eV

 

 

Al(0.3)Ga(0.7)As

 undoped

0.5

 

 

 

 

GaAs

            undoped

2

 

 

 

 

Al(0.3)Ga(0.7)As

  undoped 

0.5

 

 

 

 

 

 

 

 

 

 

 

ITEM

x/y

Doping

carrier conc.(cm3)

Thicknessum

wave length(um)

Lattice mismatch

InAs(y)P

0.25

none

5.0*10^16

1.0

-

 

In(x)GaAs

0.63

none

1.0*10^17

3.0

1.9

600<>600

InAs(y)P

0.25

S

1.0*10^18

205.0

-

 

InAs(y)P

0.05->0.25

S

1.0*10^18

4.0

-

 

InP

-

S

1.0*10^18

0.3

-

 

Substrate:InP

 

S

(1-3)*10^18

~350

-