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Home > News > PAM-XIAMEN Offers InGaP

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InGaP and other related products and services announced the new availability of size 3”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN's product line.


Dr. Shaka, said, "We are pleased to offer InGaP layer to our customers including many who are developing better and more reliable for HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications. Our InGaP layer has excellent properties, Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. The availability improve boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a square substrate. Our InGaP layer are natural by products of our ongoing efforts, currently we are devoted to continuously develop more reliable products."


PAM-XIAMEN's improved InGaP product line has benefited from strong tech. support from Native University and Laboratory Center.

 

Now it shows 2 examples as follows:


Layer name

Thickness (nm)

Doping

Remarks

In0.49Ga0.51P

400

Undoped

 

GaAs substrate (100) 2”

 

Undoped or N-doped

 

 

Layer name

Thickness (nm)

Doping

Remarks

In0.49Ga0.51P

50

Undoped

 

In0.49Al0.51P

250

Undoped

 

In0.49Ga0.51P

50

Undoped

 

GaAs substrate (100) 2”

 

Undoped or N-doped

 

 

 

About Xiamen Powerway Advanced Material Co., Ltd

 

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

 

About InGaP

 

Indium Gallium Phosphide (InGaP), also called Gallium Indium Phosphide (GaInP), is a semiconductor composed of indium,gallium and phosphorus

It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal utilise InGaP as their core particle.

Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide.

Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to  GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor lasers, e.g. red emitting(650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.

Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space=1.35 kW/m2) efficiencies in excess of 25%.

A different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.

Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random solid solution (i.e., a mixture). This changes the bandgap and the electronic and optical properties of the material.

 

Q&A

 

Q: I would like to enquire if you are able to provide Photoluminescence (PL)

and X-ray diffraction spectra test.

A: No problem.

 

Q: We are interested in your product EPI structure on GaAs, type - pHEMT with stop-layer     

   InGaP. Please find below specification on this product: D - 76,2 mm

   Structure should be made based on wafers from polarizing GaAs, EPI method.

   Mobility of charge carries - no less than 5800 cm2/В*с. Flat concentration - no  

   more than 2,0*1012 сm-2

   Scratches or other defects: none

   Front layer:

   - total length of all scratches - no more than 2 dia.

   - total square of mat spot 2 mm - no more than 0,5 of square

   - density of shining point and mat spot with size till 2 mm - no more than 25 pcs / сm2

    Electro-physical parameters are controlled by temperature of liquid nitrogen and common

    room. All technical requirements should be controlled on distance ³2 mm from wafer’s

    edge. Deviation of controlled parameters from average data - no more than ±5%

A: It could be supplied.

 

For more information, please visit our website: http://www.powerwaywafer.com,send us email at angel.ye@powerwaywafer.com or powerwaymaterial@gmail.com.