Q: Regarding your red LED epiwafers, what about the top layer or cap layer on the epiwafer structure?
A: As before we have p+GaAs(several nanometers only) in the top layer, however these two years, due to technology innovation, and all foundry remove this layer [...]
2018-06-19meta-author
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC?
A: For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.
2018-06-19meta-author
Q: Please let us know if you could supply below wafer, qty 25/50/300.
Gallium Arsenide wafers, P/P
150.00±0.25 mm) 6″Ø×650±25µm,
VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°,
u > 4,000cm²/Vs,
Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1,
TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm,
Certificate: obligatory, Sealed under nitrogen in single wafer cassette
A: Yes, will check the [...]
2018-09-13meta-author
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
2018-06-19meta-author
Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)?
A:5pcs is ok, but the price would be higher.
2018-06-19meta-author