Silicon Ingots -1
PAM XIAMEN offers Silicon Ingots. Below is just a short list. Contac us if you need other specs!
All diameters!
Note: Material – CZ unless noted
Kg in
Properties of Silicon
Stock
Silicon Ingots
Material Description
2.7
FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, NO Flats
1.15
FZ 6″Ø×25mm [...]
2019-02-15meta-author
Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]
PAM XIAMEN offers 4″Prime Silicon Wafer with double side lapping
4″ CZ crystal Si wafer
N type doped P
Orientation<111>
Resistivity 12-15Ωcm
Thickness 205-220μm
Prime Flat32.5±2.5mm
no need for DSP, just double side lapping
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-02meta-author
AlGaN is a direct wide band gap semiconductor material. By changing the composition of AlGaN material, the band gap size can be continuously adjusted from 3.39 eV to 6.1 eV, covering the UV band range from 210 nm to 360 nm, so it is [...]
2022-10-14meta-author
PAM XIAMEN offers PET film.
PET Film with protective film ,200mm×300mmx Minimum thickness-200um
PET Film with protective film
Size:,200mm×300mm
Minimum thickness: -200um
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-05-14meta-author
PAM-XIAMEN offers 10*10mm2 undoped Freestanding GaN Substrate:
1. Specification of Undoped Freestanding GaN Wafer
Item
PAM-FS-GaN-50-U
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
2. Standard Method for Testing Surface Roughness of Undoped Gallium [...]
2020-08-14meta-author