At present, silicon materials still occupy a major position in the field of semiconductors and solar energy. With the development of science and technology, the production process of integrated circuits and solar cells has put forward new requirements for silicon materials. The growth technology [...]
2022-09-15meta-author
PAM XIAMEN offers Tatalum Metal Substrate & Foil ( Polycrystalline ).
General Properties for Tantalum
Symbol Ta
Atomic Number 73
Atomic Weight: 180.95
Density: 16.69 g/cm3
Melting Point: 2996 °C
Boiling Point: 5425+/-100 °C
Ta – Tantalum Polycrystalline Metallic Foil: 0.05mm thick x 200mm Width x 400 [...]
2019-05-20meta-author
PAM-02A2 series detectors are super small sized detectors based on planar CZT. They can detect α-ray, γ-ray and β-ray simultaneously.
PAM-02A2 integrates CZT crystal, low noise charge preamplifier circuit, SK shaping circuit and high-voltage circuit. With ordered cable, it can output Quasi-gaussian signal or [...]
2019-04-23meta-author
PAM XIAMEN offers Pyrolytic Boron Nitride.
Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production.
Good [...]
2019-05-14meta-author
In the present work, dislocation arrays are investigated in float zone (FZ) grown silicon wafers by the light beam induced current (LBIC) mapping technique at different wavelengths and by deep level transient spectroscopy (DLTS). The LBIC technique appears to be able to recognize and [...]
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer Thickness: 400µm +/-25µm.
1. Specification of Prime Silicon Wafer by FZ
PRIME WAFERS SILICIUM FZ
DIAMETER 4’’ (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 400µm +/-25µm
DSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE [...]
2019-07-04meta-author