PAM-MCA-01 digital multi-channel analyzer is integrated a low noise amplifier, digital multi-channel analyzer and software. It has the advantages of high performance, compact and high pulse analyzing rate for scintillator detector and semiconductor. Please refer to table below for specific parameters:
1. Specification of Digital [...]
2023-07-10meta-author
Highlights
•Effects of atomic step width on the removal of sapphire and SiC wafers are studied.
•The reason of effects of step width on the removal and the model are discussed.
•CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed.
•The variations of atomic [...]
2015-10-28meta-author
PAM XIAMEN offers 3″ Silicon Oxide Wafer
3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles [...]
2020-04-24meta-author
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, [...]
2018-08-16meta-author
Optical and electronic simulation of gallium arsenide/silicon tandem four terminal solar cells
A tandem solar cell in a mechanical (stack like) arrangement of gallium arsenide and silicon solar cells is evaluated as a pathway towards higher efficiency terrestrial solar cells. In this work the technical [...]
2013-09-24meta-author
PAM XIAMEN offers Single crystal LiAlO2.
LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN ( <1.4 % at <100> ), chemical stability at high temperature and cost effective than ZnO. LiAlO2 crystal can replace [...]
2019-05-07meta-author
