Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!
Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]
Q: I am not sure whether practically LLO can be done on the PSS given it is not a flat surface A: “laser lift-off” actually is according to “NL layer” as below image. If the NL layer is GaN layer, when it is heating to constant high [...]
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
Q: The epitaxial wafer on pss substrate is attractive to me, so I want to know the overall efficiency it can deliver. Could you please tell me an efficiency number (lm/w or cd/A or EQE) of the device based on a structure similar to [...]
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