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Home > SiC (Silicon Carbide) Wafers

SiC Substrate and Epitaxy:

SiC substate(epi ready), N type and Semi-insulating,polytype 4H and 6H in different quality grades, Micropipe Density (MPD):Free, <5/cm2, <10/cm2, <30/cm2,<100/cm2

SiC Epitaxy:Wafer to wafer thickness uniformity: 2% ,Wafer to wafer doping uniformity: 4%

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