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PAM-XIAMEN, a wafer substrate supplier, offers epi ready substrate wafer as follows:
 
 Wikipedia:
Substrate is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second substance adheres. In solid-state electronics, this term refers to a thin slice of material such as silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide (GaAs), an alloy of silicon and germanium, or indium phosphide (InP). These serve as the foundation upon which electronic devices such as transistors, diodes, and especially integrated circuits (ICs) are deposited.
In the manufacture of ICs, the substrate material is usually formed into or cut out as thin discs called wafers, into which the individual electronic devices (transistors, etc.) are etched, deposited, or otherwise fabricated.

Epi substrate wafer:
1)SiC substrate 2”,3”,4”
Orientation :0°/4°±0.5° 
Single Crystal 4H/6H
Thickness   (250 ± 25) μm         (330 ± 25) μm         (430 ± 25) μm
Type:N/SI
Dopant:Nitrogen/V
Resistivity (RT): 0.02 ~ 0.1 Ω·cm/>1E5 Ω·cm
FWHM: A<30 arcsec                   B/C/D <50 arcsec 
Packaging:Single wafer box or multi wafer box
 
2)GaN substrate 1.5",2”,3",4"6"
Free-standing (gallium nitride) GaN Substrate
Orientation:C-axis(0001)+/-0.5°
Thickness:350um
Resistivity(300K): <0.5Ω·cm     >106Ω·cm
Dislocation Density:<5x106cm-2
TTV:<=15um
BOW:<=20um
Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished
 
3)Germanium substrate  2”,3”,4”
Orientation : <100> +/- 0.5 degree
Type / Dopant : N / Sb; P / Ga
Diameter : 100 mm
Thickness : 525 +/- 25 um
Resistivity : 0.1 ~ 40  ohm-cm
Primary flat location : <110>+/-0.5 degree
Primary flat length : 32.5 +/-2.5 mm
Front surface : Polished
Back surface : Etched
Edge surface finishing : cylindrical ground
Surface roughness  ( Ra ) : <=5A
EPD : <= 5000 cm-2
Epi ready : yes
Package : Single wafer container

4)CdZnTe substrate (15mm*15mm±0.05mm(25mm*25mm±0.05mm,30mm*30mm±0.05mm)
Orientation (111)B,(211)B
Thickness:
Doped:Undoped
Resistivity:≥1MΩ.cm
EPD≤1x105/cm3
Double side polished

5)GaAs substrate wafer 2”,3”,4”,6”
Thickness:220~500m
Conduction Type:SC/n-type
Growth Method:VGF
Dopant:Silicon/Zn 
Orientation:(100)20/60/150 off (110)
Resistivity at RT:(1.5~9)E-3 Ohm.cm
Packaging:Single wafer container or cassette
 
2" LT-GaAs 
Thickness:1-2um or 2-3um
Resistivity(300K):>108 Ohm-cm
Polishing:Single side polished
(GaAs)Gallium Arsenide Wafers for LED/LD/Microelectronics/ Applications,
 
6)Substrate silicon wafer
Growing method:FZ/CZ
Orientation:<111>/<100>
Off-orientation:4±0.5 degree to the nearest <110>
Type/Dopant:P/Boron,N/Phosphorus
Resistivity:10-20 W.cm/0.1-1 W.cm
RRV:≤15% (Max edge-Cen)/Cen
 
7)Sapphire substrate wafer 2",3",4"
Conduction Type:N-type /Semi-insulating/P
Dopant:Si doped or undoped/Fe/Mg
Thickness:4um,20um,30um,50um,100um
Orientation:C-axis(0001)+/-1°
Resistivity(300K):<0.05Ω·cm
Dislocation Density:<1x10^8cm-2
Substrate Structure: GaN on Sapphire(0001)
Surface Finish:Single or Double Side Polished,epi-ready
Usable Area :≥ 90 %

8)InP substrate 1",2",3",4"
Orientation:(111)
Thickness:300-500um
Type/Dopant:N/P/Si,Zn/Undoped/Fe
Resistivity:>1E7
 
9)InAs substrate
Orientation:(110)
Diameter:40.0mm,50.8mm
Thickness:500um,400um
Type  Dopant:P,N/S,N/Te
Orientation:(111)B
Diameter:50.8mm
Thickness:N/A
Type  Dopant:N/S
Nc:(1-3)E18a/cm3
 
Related Products:
Sapphire wafer,
Si wafer
ZnO wafer
MgO wafer
SiC substrate
GaAs epi wafer
GaN epi wafer
GaN on Si
GaN on SiC
GaN on Sapphire
 
SOURCE:PAM-XIAMEN
 
 If you need more information about substrate wafer, please visit our website:http://www.qualitymaterial.net , send us email at powerwaymaterial@gmail.com.