Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?
A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.
2018-06-19meta-author
Q: I am not sure whether practically LLO can be done on the PSS given it is not a flat surface
A: “laser lift-off” actually is according to “NL layer” as below image. If the NL layer is GaN layer, when it is heating to constant high [...]
2018-06-19meta-author
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2.
Q: Could you please advise guaranteed EPD for below substrate and epi?
Gallium Arsenide wafers, P/E 2″Ø×380±25µm,
LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm,
One-side-polished, back-side matte etched, 2 Flats,
LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
2018-09-06meta-author
Q:In your web site, the picture of the SiC wafer
does not look like regular, transparent-light green color SiC wafer.
Why is that?
A: Good question, the picture in website is Polarized light image.In regular, it is green color or grey color.
2018-06-19meta-author
Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
2018-06-19meta-author
Q: After MOCVD, do you anneal the wafer for p-GaN activation?
A:Yes! We will anneal the wafer for p-GaN activation
2018-06-19meta-author