Q: For GaN on sapphire, could you please let us know which side is epi-ready?
A: Ga-face,epi-ready and N face is connecting to sapphire.
2018-06-19meta-author
Q: For blue wafer epi on flat substrate, it would be important to omit / leave out the u-GaN layer as we want to LLO and backside conacting. Is that possible?
A:Yes, it is no problem, some clients bought our wafers for LLO.
2018-06-19meta-author
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2.
Q: Could you please advise guaranteed EPD for below substrate and epi?
Gallium Arsenide wafers, P/E 2″Ø×380±25µm,
LEC SI c doped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm,
One-side-polished, back-side matte etched, 2 Flats,
LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, [...]
2018-09-06meta-author
Q: What wafer size do you provide with flat sapphire substrate?
A:Currently we still can offer 2″ wafer on flat sapphire substrate.
2018-06-19meta-author
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?
A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]
2018-06-19meta-author
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization?
A:Considering edge dislocation and mixing dislocation and then abtained by XRD
2018-06-19meta-author