The vibrational energy of the molecule is larger than the rotational energy. When the vibrational energy level transition occurs, it is inevitably accompanied by the transition of the rotational energy level, so the pure vibrational spectrum cannot be measured, but only the vibrational-rotational spectrum [...]
2022-06-08meta-author
Gallium Nitride (GaN) is the basic material of blue LED and has important applications in LED and ultraviolet laser.
PAM-XIAMEN can epitaxially grow GaN wafers for LED and LD. For more wafer specification please visit:https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html. How do we grow GaN LED epiwafer on sapphire?
Please click [...]
2023-04-26meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm.
PRIME WAFERS SILICIUM CZ
DIAMETER 4 inch (100mm+/-0.5mm)
ORIENTATION <1-0-0> +/-1°
THICKNESS : 525µm +/-25µm
SSP
TTV < 10µm – BOW < 40µm
FLAT : 32.5mm
TYPE P
RESISTIVITY : 8 – [...]
2019-07-04meta-author
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
2″ Diameter Wafers [...]
2019-05-15meta-author
Undoped InP Wafer
PAM-XIAMEN offer low doped InP wafer substrate, see the following:
InP wafer,2” (PAM-190507-INP)
Diameter – 50.8±0.5 mm;
Thickness – 350±25 µm;
N type, low doped
Dopant – low doped
Orientation – (100)±0.5°
Flat orientation – SEMI-E/J;
Major flat orientation – (0-1-1) ±0.5°
Major flat length – 16.0±1.0 mm;
[...]
2020-03-18meta-author
Bulk GaN Crystal Grown by HVPE
We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor [...]
2012-10-16meta-author