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1″ Silicon Wafer-1
PAM XIAMEN offers 1″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 1″ 475 ±10 E/E FZ >500 {1,900-2,400} n-type Si:P [111] ±0.5° 1″ 280 P/P FZ 2,000-10,000 TTV<5μm Intrinsic Si:- [100] 1″ 320 P/E FZ >20,000 Prime Intrinsic Si:- [100] 1″ 500 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 1″ 160 P/P FZ >10,000 Prime, TTV<8μm Intrinsic Si:- [100] 0.5″ 12700 C/C FZ >10,000 a set of 4 rods sealed in polyehtylene foil Intrinsic Si:- [111] ±0.5° 1″ 500 P/P FZ >15,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 1″ 1000 P/E FZ 14,000-30,000 Cassettes of 7, 6, 6 wafers Intrinsic Si:- [111] ±2° 1″ 27870 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm p-type [...]
2019-03-08meta-author
Thermal Oxide Wafers, 2 – 4″ Research Grade-3
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
Electroluminescence Testing of GaAs LED Epitaxial Wafer
With the continuous progress of semiconductor technology, semiconductor devices such as LEDs, photovoltaic cells, semiconductor lasers, etc. have been widely used in people’s daily life and work. In order to ensure the quality and cost control in the production process of the semiconductor device, [...]
2022-09-26meta-author
SPCW Wide Range Radiation Doses Module
SPCW is a counting module based on CZT detector. It integrates CZT detector, high gain charge sensitive amplifier and SK shaping circuit. The radiation dose rates ranges from 0.1μGy/h~1Gy/h will be its guest. 1. Specification of SPCW Wide Range Radiation Doses Module Energy range 30KeV~1.5MeV (standard) / [...]
2019-04-23meta-author
150mm (6 Inch) Silicon Wafers
PAM XIAMEN offers 150mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Dia Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Grade Description PAM2716 150mm N/A 650um SSP MECH Low cost Si Wafer great for spin coating. PAM2717 150mm P B <100> 0-10 620 um SSP Test Test Grade Silicon great for wafer processing studies. PAM2718 150mm N <100> 0-100 625um SSP Test 6″ diameter (150mm), silicon wafers, N-type. PAM2719 150mm P B <100> 0.006-0.012 525um SSP Test With Oxide Back Seal PAM2720 150mm P B <100> 1-100 500um SSP Test 2 SEMI-STD FLATS WHERE [...]
2019-02-20meta-author
Study on A General Method for Polishing SiC Wafers to Atomic Level Flatness
Silicon carbide (SiC) is crucial for the growth of graphene as a substrate material for epitaxial graphene. PAM-XIAMEN can offer SiC substrate for graphene growth, specification as https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html. Graphene grown on different crystal planes of SiC has different electronic properties. Therefore, selecting SiC substrates with [...]
2024-04-22meta-author