2009 yr work

Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Why Choose Us


Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us


Recent News

Study on the Properties of Al Doped P-Type 4H-SiC by Liquid Phase Method

PAM-XIAMEN is available to offer P-type SiC substrates, please refer to: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. The p-type substrate prepared by liquid-phase method can be applied [...]

Effect of Dislocations on the Performance of 4H-SiC Wafers and Power Devices

PAM-XIAMEN can offered SiC wafers, specific specifications and parameters can be found in: https://www.powerwaywafer.com/sic-wafer 4H-SiC single crystal has excellent characteristics such as [...]

Effects of Triangle Defects on the Characteristics of SiC MOSFET Devices

PAM-XIAMEN can supply SiC epitaxial wafers for MOSFET devices, additional information please read: https://www.powerwaywafer.com/sic-mosfet-structure.html. The epitaxial process of SiC [...]

AlN Thin Film for FBAR and SAW

AlN (aluminum nitride) is a covalent bond compound with a hexagonal wurtzite structure. Usually gray or grayish white in [...]

Copper Thin Film on Sapphire Substrate for Graphene Growth

High quality large-area single crystal copper substrate is an effective method for preparing high-quality large-area single crystal graphene. There [...]

Silicon Crystal Orientation

The Silicon crystal orientations that we often hear are <100>, <110> and <111>(shown as Fig. 1), respectively indicating a crystallographic [...]

Silicon Single Electron Transistor

Single electron transistor (SET) is an important discovery in microelectronics science. Due to the ability to control the tunneling process [...]

Storage Performance Analysis of InSb Compound

Indium antimonide (InSb) compound semiconductor, as a direct bandgap semiconductor material, has low electron effective mass, high mobility, and [...]