Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Why Choose Us


Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us


Recent News

Growth of SiC nanowires/nanorods using a Fe–Si solution method

A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate [...]

3″ Silicon Wafer-15

PAM XIAMEN offers3″ Silicon Wafer-15 3″ Si wafer(32825), R≤200Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: P/type boron 3. Orientation [...]

Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer

The dependence of the morphology and crystallinity of an amorphous Ge (a-Ge) interlayer between two Si wafers on the [...]

Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour

We have investigated the photoluminescence mapping characteristics of semi-insulating (SI) InP wafers obtained by annealing in iron phosphide ambience [...]

3″ Silicon Wafer-14

PAM XIAMEN offers 3″ Silicon Wafer-14 3″ Si wafer(32849), R≥200Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: N-type/ phosphorus .3. Orientation [...]

High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy

There is a method of controlling nucleation and lateral growth using the three-dimensional (3D) and two-dimensional (2D) growth modes [...]

Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor*

Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). [...]

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and [...]