2009 yr work

Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

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Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

Partners
FRAUNHOFER
SHARP
SBIR STTR
OSRAM
POWER INTEGRATIONS
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Recent News

SiC BJT Wafer *S

SiC wafer can be used to manufacture BJT (bipolar junction transistor) devices with low conduction resistance and high blocking voltage up to [...]

2023-11-28
SiC MESFET Epitaxial Wafer *S

MESFET (Metal-Semiconductor Field Effect Transistor) is a field-effect transistor composed of Schottky barrier gates. SiC microwave MESFET was developed between 1995 [...]

2023-11-24
4H-SiC GTO Wafer *S

The ultra-high voltage gate turn-off thyristor (GTO) device based on 4H-SiC, under the action of bidirectional carrier injection and conductivity [...]

2023-11-17
4H-SiC for High Overtone Bulk Acoustic Resonator (HBAR)

High-overtone bulk acoustic resonator (HBAR) combines the advantages of surface acoustic wave (SAW) and bulk acoustic wave (BAW) resonators, [...]

2023-11-15
4H SiC APD Epitaxial Wafer *S

Weak ultraviolet light detection has important application prospects in fields such as fire warning, corona detection, and deep space detection. [...]

2023-11-10
SiC Schottky Diode Epi Wafer

Silicon carbide (SiC) materials have significant advantages in key characteristics such as bandgap width and critical breakdown field strength, [...]

2023-11-08
Semiconductor Sensor Fabricated on SiC Epitaxial Wafer

Semiconductor sensor refers to a sensor made by utilizing various physical, chemical, and biological characteristics of semiconductor materials. The majority [...]

2023-11-03
Substrates for Silicon Rectifier Production

Rectifier is a controllable rectifier device based on controllable silicon (thyristor) and centered on intelligent digital control circuits, which [...]

2023-10-10
FAQs
Gallium Arsenide wafers, P/P

Q: Please let us know if you could supply below wafer, qty 25/50/300. Gallium Arsenide wafers, P/P 150.00±0.25 mm) 6″Ø×650±25µm, VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°, u > 4,000cm²/Vs, Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1, TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm, Certificate: obligatory, Sealed under nitrogen in single wafer cassette A: Yes, will check the [...]

2018-09-13meta-author
EPD for GaAs Substrate

PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier [...]

2018-09-06meta-author
Gallium Arsenide Wafer, GaAs, VGF, Semi Insulating, Undoped

Q: We would like to ask for below. (001) +/- 0.5o Orientation Semi Insulating, Undoped Resistivity ≤ 1 – 10 x 108 Ohm-cm3 EPD ≤ 5000 cm-2 1 Side Polished (Ra < 10Å), EPI Ready, Back Side Etched US Semi Standard Flats, No Laser [...]

2018-07-17meta-author