Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Why Choose Us

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Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.
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25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.
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Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.
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Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us

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Recent News

4″ FZ Prime Silicon Wafer-6

PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6 Substrate Monocrystalline Silicon Diameter 100 ±0.3mm Growth method Fz Lifetime>1000µsec Thickness 600± 25µm Type/DopantN/Phosphorus Orientation[110]±0.5° Resistivity>5,000 Ωcm TTV<10µm Bow/Warp<40µm Primary Flat Location@[111]±<0.25° Primary Flat [...]

6″ CZ Prime Wafer 1

PAM XIAMEN offers6″ CZ Prime Wafer 1 6 inch Prime CZ-Si wafer 6 inch (+/- 0.5 mm), thickness = 200 [...]

4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3

PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3 4inch Prime CZ-Si wafer 4 inch (+/- [...]

8″ Silicon Wafer-3

PAM XIAMEN offers8″ Silicon Wafer-3 Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Notch SEMI STD Chamfer [...]

6″ FZ Silicon Wafer-5

PAM XIAMEN offers6″ FZ Silicon Wafer-5 Silicon wafers, per SEMI Prime, P/E 6″Ø×875±25µm, FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm, Warp<60μm, One-side-polished, Particles: [...]

4″CZ Prime Silicon Wafer-3

PAM XIAMEN offers 4″CZ Prime Silicon Wafer-3 Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm, One-side-polished, back-side Alkaline etched, [...]

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

The new method of solid-phase epitaxy based on the substitution of atoms and on the creation of dilatation dipoles [...]

8″ Silicon Wafer-2

PAM XIAMEN offers 8″ Silicon Wafer 8″ Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Chamfer width [...]

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