Who We Are

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on …

Why Choose Us


Good Sales Service

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

25+ Years Experiences

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Reliable Quality

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

Free And Professional Technology Support

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.
After more than 20 years of accumulation and development, our company has an obvious advantage in technology innovation and talent pool.
In the future,We need to speed up the pace of actual action to provide customers with better products and services

Doctor Chan - CEO Of Xiamen Powerway Advanced Material Co., Ltd

The World’s Most Famous Universities & Companies Trust Us


Recent News

Semiconductor Science and Technology The influence of growth conditions on the quality of CdZnTe single crystals

Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point [...]

Medium-energy ion irradiation of Si and Ge wafers: studies of surface nanopatterning and signature of recrystallization in 100 keV Kr+ bombarded a-Si

We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) [...]

6″ FZ Prime Silicon Wafer

PAM XIAMEN offers 6″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 6″ {150.0±0.5mm}Ø×1,000±25µm, FZ p-type Si:B[111]±0.5°, Ro [...]

4″ CZ Epitaxial Prime Silicon Wafer-3

PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer. 4″ Si epi wafer Growth Method: CZ 100 +/- 0.5 mm [...]

4″CZ Epitaxial Prime Silicon Wafer-2

PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer. 4″ Si substrate wafer Growth Method: CZ 100 +/- 0.5 mm [...]

4″ FZ Silicon Ignot-4

PAM XIAMEN offers 4″FZ Silicon Ignot. Silicon ingot, per SEMI, 100.7±0.3mmØ, FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm, NO Flats. NOTE: Oxygen<1E16/cc, [...]

4″ FZ Prime Silicon Wafer-5

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. 4″ Si wafer, R>20,000Ωcm Silicon, Si wafers orientation (100) dimensions 100 mm [...]

4″ FZ Prime Silicon Wafer-4

PAM XIAMEN offers 4″FZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm, FZ Intrinsic undoped Si:-[111]±0.5°, Ro [...]